Electron transport via local polarons at interface atoms
Berthe, M. (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França))
Urbieta, A. (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França))
Perdigão, L. (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França))
Grandidier, B. (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França))
Deresmes, D. (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França))
Delerue, C. (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França))
Stiévenard, D. (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França))
Rurali, Riccardo (Université Paul Sabatier)
Lorente, N. (Université Paul Sabatier)
Magaud, L. (Laboratoire d'Etude des Propriétés Electroniques des Solides (Grenoble, França))
Ordejon, Pablo (Institut de Ciència de Materials de Barcelona)
American Physical Society

Date:	2006
Abstract:	Electronic transport is profoundly modified in the presence of strong electron-vibration coupling. We show that in certain situations, the electron flow takes place only when vibrations are excited. By controlling the segregation of boron in semiconducting Si(111)-3√×3√R30° surfaces, we create a type of adatom with a dangling-bond state that is electronically decoupled from any other electronic state. However, probing this state with scanning tunnelling microscopy at 5 K yields high currents. These findings are rationalized by ab-initio calculations that show the formation of a local polaron in the transport process.
Rights:	Tots els drets reservats.
Language:	Anglès
Document:	Article ; Versió publicada
Published in:	Physical review letters, Vol. 97 Issue 20 (November 2006) , p. 206801, ISSN 1079-7114

DOI: 10.1103/PhysRevLett.97.206801

4 p, 733.7 KB

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