Nanotexturing to Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap
Brotons Gisbert, Mauro (Universitat de València)
Andrés Penares, Daniel (Universitat de València)
Suh, Joonki (University of California. Department of Materials Science and Engineering)
Hidalgo, Francisco (Institut Català de Nanociència i Nanotecnologia)
Abargues, Rafael (Intenanomat S. L.)
Rodríguez Cantó, Pedro J. (Intenanomat S.L.)
Segura, Alfredo (Universitat de València)
Cros, Ana (Universitat de València)
Tobias, Gerard (Institut de Ciència de Materials de Barcelona)
Canadell Casanova, Enric 1950- (Institut de Ciència de Materials de Barcelona)
Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia)
Wu, Junqiao (University of California. Department of Materials Science and Engineering)
Martínez Pastor, Juan P. (Universitat de València)
Sánchez Royo, Juan F. (Universitat de València)

Date:	2016
Abstract:	Manipulating properties of matter at the nanoscale is the essence of nanotechnology, which has enabled the realization of quantum dots, nanotubes, metamaterials, and two-dimensional materials with tailored electronic and optical properties. Two-dimensional semiconductors have revealed promising perspectives in nanotechnology. However, the tunability of their physical properties is challenging for semiconductors studied until now. Here we show the ability of morphological manipulation strategies, such as nanotexturing or, at the limit, important surface roughness, to enhance light absorption and the luminescent response of atomically thin indium selenide nanosheets. Besides, quantum-size confinement effects make this two-dimensional semiconductor to exhibit one of the largest band gap tunability ranges observed in a two-dimensional semiconductor: from infrared, in bulk material, to visible wavelengths, at the single layer. These results are relevant for the design of new optoelectronic devices, including heterostructures of two-dimensional materials with optimized band gap functionalities and in-plane heterojunctions with minimal junction defect density.
Grants:	Ministerio de Economía y Competitividad TEC2014-53727-C2-1-R Ministerio de Economía y Competitividad MAT2014-53500-R Ministerio de Economía y Competitividad FIS2015-64886-C5-3-P Ministerio de Economía y Competitividad FIS2015-64886-C5-4-P Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-301 Ministerio de Economía y Competitividad SEV-2015-0496 Ministerio de Economía y Competitividad SEV-2013-0295
Rights:	Tots els drets reservats.
Language:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Subject:	Band gap engineering ; Indium selenide ; Microphotoluminescence ; Nanotexturing ; Optical properties ; Two-dimensional materials
Published in:	Nano letters, Vol. 16, Issue 5 (April 2016) , p. 3221-3229, ISSN 1530-6992

DOI: 10.1021/acs.nanolett.6b00689

Postprint 26 p, 1.0 MB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles