Ballistic InSb Nanowires and Networks via Metal-Sown Selective Area Growth
Aseev, Pavel (Microsoft Quantum Lab Delft)
Wang, Guanzhong (Delft University of Technology)
Binci, Luca (Delft University of Technology)
Singh, Amrita (Delft University of Technology)
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia)
Botifoll, Marc (Institut Català de Nanociència i Nanotecnologia)
Stek, Lieuwe J. (Delft University of Technology)
Bordin, Alberto (Delft University of Technology)
Watson, John D. (Microsoft Quantum Lab Delft)
Boekhout, Frenk (QuTech and Netherlands Organization for Applied Scientific Research)
Abel, Daniel (Microsoft Quantum Lab Delft)
Gamble, John (Microsoft Quantum)
Van Hoogdalem, Kevin (Microsoft Quantum Lab Delft)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Kouwenhoven, Leo P. (Delft University of Technology)
De Lange, Gijs (Microsoft Quantum Lab Delft)
Caroff, Philippe (Microsoft Quantum Lab Delft)

Date:	2019
Abstract:	Selective area growth is a promising technique to realize semiconductor-superconductor hybrid nanowire networks, potentially hosting topologically protected Majorana-based qubits. In some cases, however, such as the molecular beam epitaxy of InSb on InP or GaAs substrates, nucleation and selective growth conditions do not necessarily overlap. To overcome this challenge, we propose a metal-sown selective area growth (MS SAG) technique, which allows decoupling selective deposition and nucleation growth conditions by temporarily isolating these stages. It consists of three steps: (i) selective deposition of In droplets only inside the mask openings at relatively high temperatures favoring selectivity, (ii) nucleation of InSb under Sb flux from In droplets, which act as a reservoir of group III adatoms, done at relatively low temperatures, favoring nucleation of InSb, and (iii) homoepitaxy of InSb on top of the formed nucleation layer under a simultaneous supply of In and Sb fluxes at conditions favoring selectivity and high crystal quality. We demonstrate that complex InSb nanowire networks of high crystal and electrical quality can be achieved this way. We extract mobility values of 10※000-25※000 cm V s consistently from field-effect and Hall mobility measurements across single nanowire segments as well as wires with junctions. Moreover, we demonstrate ballistic transport in a 440 nm long channel in a single nanowire under a magnetic field below 1 T. We also extract a phase-coherent length of ∼8 μm at 50 mK in mesoscopic rings.
Grants:	Agència de Gestió d'Ajuts Universitaris i de Recerca 2017/SGR-327 Ministerio de Economía y Competitividad SEV-2013-0295
Rights:	Tots els drets reservats.
Language:	Anglès
Document:	Article ; recerca ; Versió sotmesa a revisió
Subject:	InSb ; Molecular beam epitaxy ; Selective area growth ; Droplet epitaxy
Published in:	Nano letters, Vol. 19, Issue 12 (December 2019) , p. 9102-9111, ISSN 1530-6992

DOI: 10.1021/acs.nanolett.9b04265

Preprint 45 p, 1.3 MB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles