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Pàgina inicial > Articles > Articles publicats > Self-pixelation through fracture in VO2 thin films |
Data: | 2020 |
Resum: | Vanadium dioxide (VO2) is an archetypal Mott material with a metal-insulator transition (MIT) at near room temperature. In thin films, this transition is affected by substrate-induced strain but as film thickness increases, the strain is gradually relaxed and the bulk properties are recovered. Epitaxial films of VO2 on (001)-oriented rutile titanium dioxide (TiO2) relax substrate strain by forming a network of fracture lines that crisscross the film along well-defined crystallographic directions. This work shows that the electronic properties associated with these lines result in a pattern that resembles a "street map" of fully strained metallic VO2 blocks separated by insulating VO2 stripes. Each block of VO2 is thus electronically self-insulated from its neighbors, and its MIT can be locally induced optically with a laser, or electronically via the tip of a scanning probe microscope so that the films behave functionally as self-patterned pixel arrays. |
Ajuts: | Ministerio de Economía y Competitividad MAT2016-77100-C2-1-P Ministerio de Economía y Competitividad SEV-2017-0706 Ministerio de Economía y Competitividad JC-2015-25201 Ministerio de Ciencia e Innovación FIS2017-85787 |
Nota: | Altres ajuts: the Catalan AGAUR agency for 2017SGR. The CERCA programme/Generalitat de Catalunya |
Drets: | Tots els drets reservats. |
Llengua: | Anglès |
Document: | Article ; recerca ; Versió acceptada per publicar |
Matèria: | Metal−insulator transition ; Thin films ; Vanadium dioxide ; Cracks ; Pixelation ; Scanning Kelvin probe microscopy |
Publicat a: | ACS applied electronic materials, Vol. 2, issue 5 (May 2020) , p. 1433-1439, ISSN 2637-6113 |
Preprint 28 p, 1.8 MB |