Enabling electromechanical transduction in silicon nanowire mechanical resonators fabricated by focused ion beam implantation
Llobet Sixto, Jordi (Institut de Microelectrònica de Barcelona)
Sansa Perna, Marc (Institut de Microelectrònica de Barcelona)
Gerbolés, M. (Institut de Microelectrònica de Barcelona)
Mestres i Andreu, Narcís (Institut de Ciència de Materials de Barcelona)
Arbiol i Cobos, Jordi (Institució Catalana de Recerca i Estudis Avançats)
Borrisé, Xavier (Institut Català de Nanociència i Nanotecnologia)
Pérez Murano, Francesc (Institut de Microelectrònica de Barcelona)

Título variante:	Enabling electromechanical transduction in silicon nanowire mechanical resonators fabricated by FIB ion implantation
Fecha:	2014
Resumen:	We present the fabrication of silicon nanowire (SiNW) mechanical resonators by a resistless process based on focused ion beam local gallium implantation, selective silicon etching and diffusive boron doping. Suspended, doubly clamped SiNWs fabricated by this process presents a good electrical conductivity which enables the electrical read-out of the SiNW oscillation. During the fabrication process, gallium implantation induces the amorphization of silicon that, together with the incorporation of gallium into the irradiated volume, increases the electrical resistivity to values higher than 3 Ω m, resulting in an unacceptably high resistance for electrical transduction. We show that the conductivity of the SiNWs can be restored by performing a high temperature doping process, which allows us to recover the crystalline structure of the silicon and to achieve a controlled resistivity of the structures. Raman spectroscopy and TEM microscopy are used to characterize the recovery of crystallinity, while electrical measurements show a resistivity of 10 Ω m. This resistivity allows to obtain excellent electromechanical transduction, which is employed to characterize the high frequency mechanical response by electrical methods.
Ayudas:	Ministerio de Economía y Competitividad MAT2011-15159-E Ministerio de Economía y Competitividad CSD2010-00024 Ministerio de Economía y Competitividad TEC2009-14517-C02-01 Ministerio de Economía y Competitividad CSIC10-4E-805 Agència de Gestió d'Ajuts Universitaris i de Recerca 2009/SGR-265
Derechos:	Tots els drets reservats.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió sotmesa a revisió
Materia:	Nanofabrication ; Silicon nanowires ; Electrical transduction ; FIB gallium implantation ; NEMS
Publicado en:	Nanotechnology, Vol. 25, issue 13 (April 2014) , art. 135302, ISSN 1361-6528

DOI: 10.1088/0957-4484/25/13/135302

Preprint 14 p, 417.1 KB

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Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
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