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Pàgina inicial > Documents de recerca > Prepublicacions > Heat dissipation in few-layer MoS2 and MoS2/hBN heterostructure |
Data: | 2021 |
Resum: | State-of-the-art fabrication and characterization techniques have been employed to measure the thermal conductivity of suspended, single-crystalline MoS2 and MoS2/hBN heterostructures. Two-laser Raman scattering thermometry was used combined with real time measurements of the absorbed laser power, which allowed us to determine the thermal conductivities without any assumptions. Measurements on MoS2 layers with thicknesses of 5 and 14 exhibit thermal conductivity in the range between 12 and 24 Wm-1K-1. Additionally, after determining the thermal conductivity of a selected MoS2 sample, an hBN flake was transferred onto it and the effective thermal conductivity of the heterostructure was subsequently measured. Remarkably, despite that the thickness of the hBN layer was less than a third of the thickness of the MoS2 layer, the heterostructure showed an almost eight-fold increase in the thermal conductivity, being able to dissipate more than 10 times the laser power without any visible sign of damage. These results are consistent with a high thermal interface conductance between MoS2 and hBN and an efficient in-plane heat spreading driven by hBN. Indeed, we estimate G 70 MWm-2K-1 which is significantly higher than previously reported values. Our work therefore demonstrates that the insertion of hBN layers in potential MoS2 based devices holds the promise for efficient thermal management. |
Ajuts: | European Commission 289061 Agencia Estatal de Investigación PID2019-111773RB-I00 Agencia Estatal de Investigación RYC2019-027879-I Agencia Estatal de Investigación RYC2019-028368-I Ministerio de Ciencia e Innovación PGC2018-101743-B-I00 Ministerio de Ciencia e Innovación PGC2018-094490-B-C22 Ministerio de Ciencia e Innovación FIS2017-85787-R Ministerio de Economía y Competitividad SEV-2017-0706 Ministerio de Economía y Competitividad JC-2015-25201 Ministerio de Economía y Competitividad RYC2014-15392 |
Drets: | Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades. |
Llengua: | Anglès |
Document: | Prepublicació ; recerca ; Versió de l'autor |
Obra relacionada: | Arrighi, Alois ; del Corro, Elena ; Navarro Urrios, Daniel ; Costache, Marius V. ; Sierra, Juan F. ; Watanabe, Kenji ; Taniguchi, Takashi ; Garrido, J. A. ; Valenzuela, Sergio O. ; Sotomayor Torres, Clivia M. ; Sledzinska, Mariana. «Heat dissipation in few-layer MoS2 and MoS2/hBN heterostructure». 2D Materials, Vol. 9, number 1 (Jan. 2022), art. 015005 https://doi.org/10.1088/2053-1583/ac2e51 |
12 p, 1.0 MB |