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Página principal > Libros y colecciones > Capítulos de libros > Circuit reliability prediction : |
Publicación: | Institute of Electrical and Electronics Engineers, 2021 |
Resumen: | The characterization of the MOSFET Time-Dependent Variability (TDV) can be a showstopper for reliability-aware circuit design in advanced CMOS nodes. In this work, a complete MOSFET characterization flow is presented, in the context of a physics-based TDV compact model, that addresses the main TDV characterization challenges for accurate circuit reliability prediction at design time. The pillars of this approach are described and illustrated through examples. |
Ayudas: | Agencia Estatal de Investigación PID2019-103869RB Agencia Estatal de Investigación TEC2016-75151-C3-1-R |
Derechos: | Tots els drets reservats. |
Lengua: | Anglès |
Documento: | Capítol de llibre ; recerca ; Versió acceptada per publicar |
Materia: | Aging ; BTI ; Characterization ; CMOS technology ; HCI degradation ; MOSFET ; RTN ; Time-dependent variability |
Publicado en: | 2021 IEEE Latin America Electron Devices Conference, 2021, p. 1-4, ISBN 978-1-6654-1510-1 |
Postprint 5 p, 667.4 KB |